Thermodynamic and dielectric properties of MgSiN2 ceramics
Lences, Z; Hirao, K; Sajgalik, P; Hoffmann, MJ
SCIENCE OF ENGINEERING CERAMICS III, 2006, Band 317-318, S. 857-860
Reaction bonded MgSiN2 (RBMSN) was prepared by direct nitridation of a Si/Mg2Si/Mg/Si3N4 powder compact in a temperature range of 1350-1550 degrees C. The oxygen content of MgSiN2 was in the range of 0.4 - 0.6 wt%. A thermal stability examination showed that MgSiN2 is stable up to 1400 degrees C at 0.1 MPa N-2 pressure. The activation energy of decomposition calculated from the temperature dependence of weight loss is Delta H = 383 kJ center dot mol(-1). The time dependence and nitrogen pressure dependence of MgSiN2 decomposition was also investigated at constant temperature. MgSiN2 is stable at 1560 degrees C in 0.6 MPa nitrogen atmosphere. Using these experimental data together with the heat capacity published in a literature the Gibbs free energy of formation of MgSiN2 was calculated in a temperature range 300-2500 K. Dense MgSiN2 ceramics or MgSiN2/Si3N4 composites with fluorine-based additives were prepared by hot pressing. The composite materials had a 4-point bending strength of 427 MPa and Vickers hardness (HV1) of 20.8 GPa, respectively. The indentation fracture toughness was 5.3 MPa.m(1/2), due to the presence of elongated beta-Si3N4 grains. The dielectric constant of dense reaction bonded MgSiN2 at 100 kHz was 9.5-10, while that of MgSiN2/Si3N4 composite in a wide range 50 6000, depending on composition and heat treatment.